Crucial Technology CT51264BD160B.C16F 4GB vs Crucial Technology BLS8G4D240FSE.M16FAD 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13

测试中的平均数值
更快的写入速度，GB/s

9.7 8.6

测试中的平均数值

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

13.9 13.0
写入速度，GB/s

9.7 8.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2366 2243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Micron Technology 36ADS2G72PZ-2G1A1 16GB

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PNY Electronics PNY 2GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

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AMD AE34G1601U1 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston HP32D4U8S8HC-8X 8GB

Kingston HP32D4U8S8HC-8X 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMT32GX4M4C3600C18 8GB

Corsair CMT32GX4M4C3600C18 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

A-DATA Technology DDR4 4133 2OZ 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

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