RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C17-8GISM 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-2400C17-8GISM 8GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 12.6
    测试中的平均数值
G Skill Intl F4-2400C17-8GISM 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GISM 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 -46% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C17-8GISM 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 12.6
  • 写入速度，GB/s
    9.7 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2759

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

G Skill Intl F4-2400C17-8GISM 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F4-2400C17-8GISM 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
SK Hynix HMT351U6CFR8C-PB 4GB
SK Hynix HMT351U6CFR8C-PB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9905678-027.A00G 8GB
Kingston 9905678-027.A00G 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C16-8GFT 8GB
G Skill Intl F4-2400C16-8GFT 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM