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Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4266C19-8GTZA 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-4266C19-8GTZA 8GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
G Skill Intl F4-4266C19-8GTZA 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 18.0
  • 写入速度，GB/s
    9.7 left arrow 15.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 3660

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

G Skill Intl F4-4266C19-8GTZA 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
G Skill Intl F4-4266C19-8GTZA 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Essencore Limited KD4AGS88C-26N1900 16GB
Essencore Limited KD4AGS88C-26N1900 16GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4000C18-16GTZN 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Maxsun MSD48G30Q3 8GB
Maxsun MSD48G30Q3 8GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMR128GX4M8Z2933C16 16GB
Corsair CMR128GX4M8Z2933C16 16GB
内存RAM