Crucial Technology CT51264BD160B.C16F 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.8 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 36
读取速度，GB/s

13.9 17.4
写入速度，GB/s

9.7 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 3074

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB