Crucial Technology CT51264BD160B.C16F 4GB vs Maxsun MSD416G26Q3 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 84

左右 51% 更低的延时
更快的读取速度，GB/s

13.9 12.5

测试中的平均数值
更快的写入速度，GB/s

9.7 7.0

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 84
读取速度，GB/s

13.9 12.5
写入速度，GB/s

9.7 7.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471B5173DB0-YK0 4GB

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Corsair CML8GX3M2A1600C9 4GB

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G Skill Intl F4-2400C16-8GFX 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

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Corsair CMK32GX4M2B3333C16 16GB