Crucial Technology CT51264BD160B.C16F 4GB vs Patriot Memory (PDP Systems) 4400 C19 Series 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

19.5 13.9

测试中的平均数值
更快的写入速度，GB/s

17.8 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

13.9 19.5
写入速度，GB/s

9.7 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 3910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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Crucial Technology CT8G4SFS8213.M8FB 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3200C14-16GVR 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Hewlett-Packard 7EH61AA# 8GB