Crucial Technology CT51264BD160B.C16F 4GB vs Roa Logic BV W4U2666CX1-8G 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Roa Logic BV W4U2666CX1-8G 8GB

需要考虑的原因
Roa Logic BV W4U2666CX1-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

16.5 13.9

测试中的平均数值
更快的写入速度，GB/s

13.7 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Roa Logic BV W4U2666CX1-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.9 16.5
写入速度，GB/s

9.7 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Apacer Technology 76.B305G.D500B 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

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Kingston KF3200C16D4/8GX 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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