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Crucial Technology CT51264BD160B.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Samsung V-GeN D4S8GL26A8TL5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 41
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 22
  • 读取速度，GB/s
    13.9 left arrow 18.0
  • 写入速度，GB/s
    9.7 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 3110

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Samsung V-GeN D4S8GL26A8TL5 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CMD16GX4M2B3200C14 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
内存RAM
SK Hynix HMT125S6TFR8C-G7 2GB
SK Hynix HMT125S6TFR8C-G7 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston CBD26D4S9S8ME-8 8GB
Kingston CBD26D4S9S8ME-8 8GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905734-018.A00G 16GB
Kingston 9905734-018.A00G 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston XJV223-MIE-NX 16GB
Kingston XJV223-MIE-NX 16GB
内存RAM