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Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMT451U6MFR8C-PB 4GB

Crucial Technology CT51264BD160B.C16F 4GB vs SK Hynix HMT451U6MFR8C-PB 4GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
SK Hynix HMT451U6MFR8C-PB 4GB

SK Hynix HMT451U6MFR8C-PB 4GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.6
    测试中的平均数值
SK Hynix HMT451U6MFR8C-PB 4GB 需要考虑的原因
SK Hynix HMT451U6MFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 41
    左右 -21% 更低的延时

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMT451U6MFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 34
  • 读取速度，GB/s
    13.9 left arrow 13.1
  • 写入速度，GB/s
    9.7 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2158

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

SK Hynix HMT451U6MFR8C-PB 4GB RAM的比较

Crucial Technology CT51264BA160BJ.C8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMT451U6MFR8C-PB 4GB
SK Hynix HMT451U6MFR8C-PB 4GB
内存RAM
Mushkin 991988 (996988) 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
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Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
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内存RAM
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Samsung M3 78T5663RZ3-CF7 2GB
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内存RAM
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内存RAM
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内存RAM
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Kingston KF3200C16D4/8GX 8GB
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Kingston KHX2666C16/8G 8GB
内存RAM