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Crucial Technology CT51264BD160B.C16F 4GB
Transcend Information TS1GSH64V1H 8GB

Crucial Technology CT51264BD160B.C16F 4GB vs Transcend Information TS1GSH64V1H 8GB

总分
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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
Transcend Information TS1GSH64V1H 8GB 需要考虑的原因
Transcend Information TS1GSH64V1H 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 -52% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
Transcend Information TS1GSH64V1H 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 27
  • 读取速度，GB/s
    13.9 left arrow 14.2
  • 写入速度，GB/s
    9.7 left arrow 9.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2366 left arrow 2330

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB

Transcend Information TS1GSH64V1H 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston KHX2666C16S4/16G 16GB
Kingston KHX2666C16S4/16G 16GB
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Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Kingston 99U5403-003.A00LF 2GB
Kingston 99U5403-003.A00LF 2GB
Kingston 99U5403-067.A00LF 4GB
Kingston 99U5403-067.A00LF 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Kingston ACR16D3LU1KNG/4G 4GB
Kingston ACR16D3LU1KNG/4G 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
Kingston ACR16D3LU1KFG/4G 4GB
Kingston ACR16D3LU1KFG/4G 4GB
Kingston DDR3 1333G 2GB
Kingston DDR3 1333G 2GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM