RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BF160B.M16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
比较
Crucial Technology CT51264BF160B.M16F 4GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
总分
Crucial Technology CT51264BF160B.M16F 4GB
总分
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
需要考虑的原因
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 -12% 更低的延时
更快的读取速度,GB/s
15.4
11.8
测试中的平均数值
更快的写入速度,GB/s
13.4
8.2
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
25
读取速度,GB/s
11.8
15.4
写入速度,GB/s
8.2
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1854
2786
Crucial Technology CT51264BF160B.M16F 4GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905624-014.A00G 4GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Kingston KF556C40-16 16GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK32GX4M2F4000C19 16GB
Samsung M471B5773DH0-CH9 2GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GS88C-32N2200 8GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2800C16-4GRR 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Transcend Information TS1GLH64V4B 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMW32GX4M2D3600C18 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMR16GX4M2D3200C16 8GB
报告一个错误
×
Bug description
Source link