Crucial Technology CT51264BF160B.M16F 4GB vs Corsair CMD16GX4M2B3866C18 8GB

总分

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分

Corsair CMD16GX4M2B3866C18 8GB

Corsair CMD16GX4M2B3866C18 8GB

差异规格评论

差异

Crucial Technology CT51264BF160B.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB

报告一个错误

Corsair CMD16GX4M2B3866C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 28

左右 -40% 更低的延时
更快的读取速度，GB/s

19.2 11.8

测试中的平均数值
更快的写入速度，GB/s

14.8 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160B.M16F 4GB

Corsair CMD16GX4M2B3866C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 20
读取速度，GB/s

11.8 19.2
写入速度，GB/s

8.2 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1854 3326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

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Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB