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Crucial Technology CT8G4SFS8266.C8FD1 8GB
Netac Technology Co Ltd E40832A 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB vs Netac Technology Co Ltd E40832A 8GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

总分
star star star star star
Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

差异 规格 评论

差异

Crucial Technology CT8G4SFS8266.C8FD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.C8FD1 8GB
报告一个错误
Netac Technology Co Ltd E40832A 8GB 需要考虑的原因
Netac Technology Co Ltd E40832A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 35
    左右 -3% 更低的延时

规格

完整的技术规格清单
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Netac Technology Co Ltd E40832A 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 34
  • 读取速度，GB/s
    16.4 left arrow 16.4
  • 写入速度，GB/s
    10.8 left arrow 10.8
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2660 left arrow 2732

Crucial Technology CT8G4SFS8266.C8FD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB

Netac Technology Co Ltd E40832A 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Samsung M3 78T5663RZ3-CF7 2GB
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内存RAM
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内存RAM
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