Crucial Technology RM51264BA1339.16FR 4GB vs Kingston KHX1600C9D3/4GX 4GB

总分

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

总分

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

差异规格评论

差异

Crucial Technology RM51264BA1339.16FR 4GB

需要考虑的原因
Crucial Technology RM51264BA1339.16FR 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 35% 更低的延时

Kingston KHX1600C9D3/4GX 4GB

需要考虑的原因
Kingston KHX1600C9D3/4GX 4GB

报告一个错误

更快的读取速度，GB/s

14.4 12.3

测试中的平均数值
更快的写入速度，GB/s

8.8 7.4

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology RM51264BA1339.16FR 4GB

Kingston KHX1600C9D3/4GX 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

26 40
读取速度，GB/s

12.3 14.4
写入速度，GB/s

7.4 8.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2078 2363

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

AMD R5316G1609U2K 8GB

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Peak Electronics 256X64M-67E 2GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

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Corsair CMSX16GX4M2A2666C18 8GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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SK Hynix HMA81GU6CJR8N-VK 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Essencore Limited IM44GU48N26-GIIHA0 4GB