Elpida EBE21UE8ACUA-8G-E 2GB vs Corsair CMSX32GX4M2A3000C18 16GB

总分

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

总分

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

差异规格评论

差异

Elpida EBE21UE8ACUA-8G-E 2GB

需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,001.3 13.8

测试中的平均数值

Corsair CMSX32GX4M2A3000C18 16GB

需要考虑的原因
Corsair CMSX32GX4M2A3000C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 58

左右 -76% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Elpida EBE21UE8ACUA-8G-E 2GB

Corsair CMSX32GX4M2A3000C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 33
读取速度，GB/s

4,796.5 16.2
写入速度，GB/s

2,001.3 13.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

768 3209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK64GX4M4A2666C16 16GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Corsair CMK64GX4M4D3600C18 16GB

Corsair CMK64GX4M4D3600C18 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMU32GX4M4D3000C16 8GB

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Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Corsair CMD16GX4M4B3400C16 4GB

Corsair CMD16GX4M4B3400C16 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB