Elpida EBJ17RG4EFWA-DJ-F 16GB vs Corsair CMSX16GX4M2A2666C18 8GB

总分

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

差异规格评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB

需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB

报告一个错误

Corsair CMSX16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMSX16GX4M2A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的读取速度，GB/s

15 9.4

测试中的平均数值
更快的写入速度，GB/s

11.3 6.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Elpida EBJ17RG4EFWA-DJ-F 16GB

Corsair CMSX16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

9.4 15.0
写入速度，GB/s

6.7 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1929 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB

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Corsair CMK32GX4M4D3000C16 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB