Elpida EBJ17RG4EFWA-DJ-F 16GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB

需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB

报告一个错误

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 54

左右 -170% 更低的延时
更快的读取速度，GB/s

19.7 9.4

测试中的平均数值
更快的写入速度，GB/s

15.2 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ17RG4EFWA-DJ-F 16GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 20
读取速度，GB/s

9.4 19.7
写入速度，GB/s

6.7 15.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1929 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99P5471-002.A00LF 2GB

Corsair CMU32GX4M4C3000C15 8GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-3333C16-16GVR 16GB