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Elpida EBJ20UF8BDU0-GN-F 2GB
SK Hynix HMT125S6TFR8C-H9 2GB

Elpida EBJ20UF8BDU0-GN-F 2GB vs SK Hynix HMT125S6TFR8C-H9 2GB

总分
star star star star star
Elpida EBJ20UF8BDU0-GN-F 2GB

Elpida EBJ20UF8BDU0-GN-F 2GB

总分
star star star star star
SK Hynix HMT125S6TFR8C-H9 2GB

SK Hynix HMT125S6TFR8C-H9 2GB

差异 规格 评论

差异

Elpida EBJ20UF8BDU0-GN-F 2GB 需要考虑的原因
Elpida EBJ20UF8BDU0-GN-F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
SK Hynix HMT125S6TFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT125S6TFR8C-H9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    11.9 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
Elpida EBJ20UF8BDU0-GN-F 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    11.5 left arrow 11.9
  • 写入速度，GB/s
    7.9 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1674 left arrow 1378

Elpida EBJ20UF8BDU0-GN-F 2GB RAM的比较

Samsung M471B5773DH0-CH9 2GB

SK Hynix HMT125S6TFR8C-H9 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5173EB0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Elpida EBJ20UF8BDU0-GN-F 2GB
Elpida EBJ20UF8BDU0-GN-F 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
SK Hynix HMT125S6TFR8C-H9 2GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
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G Skill Intl F4-3733C17-8GTZSW 8GB
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Kingston 99U5665-004.A00G 4GB
内存RAM
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内存RAM