Elpida EBJ40EG8BFWB-JS-F 4GB vs G Skill Intl F4-3333C16-4GRKD 4GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时
更快的读取速度，GB/s

13.9 12.9

测试中的平均数值

G Skill Intl F4-3333C16-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3333C16-4GRKD 4GB

报告一个错误

更快的写入速度，GB/s

10.3 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 14200

左右 1.2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

13.9 12.9
写入速度，GB/s

9.6 10.3
内存带宽，mbps

14200 17000

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2558 2619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M378A2K43DB1-CTD 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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G Skill Intl F4-3333C16-4GRKD 4GB

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Golden Empire CL15-15-15 D4-2666 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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PNY Electronics PNY 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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PUSKILL DDR3 1600 8G 8GB

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