Elpida EBJ40UG8BBU0-GN-F 4GB vs AMD R538G1601S2LS 8GB

总分

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

总分

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

差异规格评论

差异

Elpida EBJ40UG8BBU0-GN-F 4GB

需要考虑的原因
Elpida EBJ40UG8BBU0-GN-F 4GB

报告一个错误

更快的读取速度，GB/s

12.5 11.3

测试中的平均数值

AMD R538G1601S2LS 8GB

需要考虑的原因
AMD R538G1601S2LS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时

规格

完整的技术规格清单

Elpida EBJ40UG8BBU0-GN-F 4GB

AMD R538G1601S2LS 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 28
读取速度，GB/s

12.5 11.3
写入速度，GB/s

8.2 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2087 1793

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C18-32GTRS 32GB

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Nanya Technology NT1GT64U88D0BY-AD 1GB

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Crucial Technology CT8G4DFS824A.C8FDD1 8GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT8G4SFS824A.M8FE 8GB

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Team Group Inc. TEAMGROUP-UD4-3866 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Avant Technology W642GU42J2320NH 16GB

Avant Technology W642GU42J2320NH 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

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Kingston 99U5584-004.A00LF 4GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology CT8G4SFD8213.C16FBR2 8GB

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Samsung M471B5173QH0-YK0 4GB

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB