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Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3400C16-8GSXW 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs G Skill Intl F4-3400C16-8GSXW 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
G Skill Intl F4-3400C16-8GSXW 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
G Skill Intl F4-3400C16-8GSXW 8GB 需要考虑的原因
G Skill Intl F4-3400C16-8GSXW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 43
    左右 -153% 更低的延时
  • 更快的读取速度，GB/s
    22 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3400C16-8GSXW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 17
  • 读取速度，GB/s
    12.7 left arrow 22.0
  • 写入速度，GB/s
    8.0 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3704

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

G Skill Intl F4-3400C16-8GSXW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965690-002.A00G 8GB
Kingston 9965690-002.A00G 8GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Kingston 9905599-020.A00G 8GB
Kingston 9905599-020.A00G 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Nanya Technology NT1GT64U88D0BY-AD 1GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM