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Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M391A1K43BB1-CRC 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB vs Samsung M391A1K43BB1-CRC 8GB

总分
star star star star star
Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

总分
star star star star star
Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

差异 规格 评论

差异

Elpida EBJ40UG8EFU0-GN-F 4GB 需要考虑的原因
Elpida EBJ40UG8EFU0-GN-F 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.7 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 5.5
    测试中的平均数值
Samsung M391A1K43BB1-CRC 8GB 需要考虑的原因
Samsung M391A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 43
    左右 -65% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40UG8EFU0-GN-F 4GB
Samsung M391A1K43BB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 26
  • 读取速度，GB/s
    12.7 left arrow 12.0
  • 写入速度，GB/s
    8.0 left arrow 5.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 1925

Elpida EBJ40UG8EFU0-GN-F 4GB RAM的比较

Crucial Technology CT51264BF160B.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Samsung M391A1K43BB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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G Skill Intl F3-2800C12-8GTXDG 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Samsung M393A2K43CB1-CRC 16GB
内存RAM