Elpida EBJ41UF8BDU5-GN-F 4GB vs Micron Technology 8ATF1G64HZ-2G6B1 8GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 27% 更低的延时

Micron Technology 8ATF1G64HZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6B1 8GB

报告一个错误

更快的读取速度，GB/s

14.5 14.4

测试中的平均数值
更快的写入速度，GB/s

11.6 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 33
读取速度，GB/s

14.4 14.5
写入速度，GB/s

9.4 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2267 2590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3000C16-8GSXFB 8GB

G Skill Intl F4-3000C16-8GSXFB 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

Kingston 99U5584-018.A00LF 4GB

Kingston 99U5584-018.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB