Elpida EBJ81UG8BBU0-GN-F 8GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 68

左右 35% 更低的延时
更快的写入速度，GB/s

9.1 8.1

测试中的平均数值

SK Hynix V-GeN D4H4GL26A8TL 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB

报告一个错误

更快的读取速度，GB/s

16.2 13.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 68
读取速度，GB/s

13.2 16.2
写入速度，GB/s

9.1 8.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2302 1812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C10D3/8GXF 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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SK Hynix V-GeN D4H4GL26A8TL 4GB

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AMD R534G1601U1S-UO 4GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

Samsung M378A1K43BB2-CRC 8GB

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Corsair CMK64GX4M4A2666C16 16GB

Corsair CMK64GX4M4A2666C16 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB