EVGA 16G-D3-1600-MR 8GB vs Super Talent F21UB8GS 8GB

总分

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

总分

Super Talent F21UB8GS 8GB

Super Talent F21UB8GS 8GB

差异规格评论

差异

EVGA 16G-D3-1600-MR 8GB

需要考虑的原因
EVGA 16G-D3-1600-MR 8GB

报告一个错误

更快的读取速度，GB/s

14.3 14

测试中的平均数值
更快的写入速度，GB/s

9.1 7.2

测试中的平均数值

Super Talent F21UB8GS 8GB

需要考虑的原因
Super Talent F21UB8GS 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 33

左右 -50% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

EVGA 16G-D3-1600-MR 8GB

Super Talent F21UB8GS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 22
读取速度，GB/s

14.3 14.0
写入速度，GB/s

9.1 7.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2667 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Kingston 9905403-156.A00LF 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston XRMWRN-MIE 16GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT4G4SFS824A.M8FB 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB