G Skill Intl F2-5300CL4-1GBSA 1GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 52

左右 -126% 更低的延时
更快的写入速度，GB/s

13.2 1,479.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 23
读取速度，GB/s

4,226.4 16.7
写入速度，GB/s

1,479.2 13.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

590 3025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston HP32D4U8D8HC-16X 16GB

Kingston HP32D4U8D8HC-16X 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB