G Skill Intl F2-5300CL4-1GBSA 1GB vs Corsair CM4X4GD3000C15K4 4GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

Corsair CM4X4GD3000C15K4 4GB

需要考虑的原因
Corsair CM4X4GD3000C15K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 52

左右 -148% 更低的延时
更快的写入速度，GB/s

13.5 1,479.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Corsair CM4X4GD3000C15K4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 21
读取速度，GB/s

4,226.4 17.7
写入速度，GB/s

1,479.2 13.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

590 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M471A2K43EB1-CWE 16GB

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Kingston 99P5474-014.A00LF 4GB

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Crucial Technology CT8G4DFD824A.C16FBD1 8GB

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Kingston ACR32D4S2S8ME-16 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CMK32GX4M4B3000C15 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F4-2400C15-8GNS 8GB