G Skill Intl F2-5300CL4-1GBSA 1GB vs SK Hynix HMA851S6AFR6N-UH 4GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 13.8

测试中的平均数值

SK Hynix HMA851S6AFR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851S6AFR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 52

左右 -37% 更低的延时
更快的写入速度，GB/s

9.8 1,479.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

SK Hynix HMA851S6AFR6N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 38
读取速度，GB/s

4,226.4 13.8
写入速度，GB/s

1,479.2 9.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

590 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Corsair CMSX32GX4M2A3000C16 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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G Skill Intl F4-3000C14-16GTZR 16GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3000C15-8GVKB 8GB

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Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

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G Skill Intl F4-3200C16-8GTZR 8GB

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Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB