G Skill Intl F2-5300CL4-1GBSA 1GB vs Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 21.6

测试中的平均数值

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 52

左右 -86% 更低的延时
更快的写入速度，GB/s

18.2 1,479.2

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 28
读取速度，GB/s

4,226.4 21.6
写入速度，GB/s

1,479.2 18.2
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

590 3890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Samsung M3 78T5663EH3-CF7 2GB

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Samsung DDR3 8GB 1600MHz 8GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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SK Hynix HMT42GR7MFR4A-PB 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

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Corsair CMK64GX5M2B5200C40 32GB

Corsair CMK64GX5M2B5200C40 32GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB