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G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M4B2133C10 4GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMD16GX4M4B2133C10 4GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Corsair CMD16GX4M4B2133C10 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
15.8
测试中的平均数值
更快的写入速度,GB/s
2,935.8
11.7
测试中的平均数值
需要考虑的原因
Corsair CMD16GX4M4B2133C10 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
45
左右 -88% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M4B2133C10 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
24
读取速度,GB/s
6,336.8
15.8
写入速度,GB/s
2,935.8
11.7
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
2971
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Corsair CMD16GX4M4B2133C10 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DPT5MK8-TATP 2GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Kingston K531R8-MIN 4GB
Kingston 9965662-002.A01G 16GB
Samsung M471A1G44BB0-CWE 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD16GX4M4B2133C10 4GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905630-039.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A2K43CB1-CRC 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C16-8GRKB 8GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Samsung M393B5170GB0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ASU21D4U5S8MB-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GSXFB 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
报告一个错误
×
Bug description
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