RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
低于PassMark测试中的延时,ns
45
74
左右 39% 更低的延时
更快的读取速度,GB/s
6
13.6
测试中的平均数值
需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
报告一个错误
更快的写入速度,GB/s
7.7
2,935.8
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
74
读取速度,GB/s
6,336.8
13.6
写入速度,GB/s
2,935.8
7.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1144
1616
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3466C16-8GTZKW 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Apacer Technology 78.CAGN7.4000C 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA451R7AFR8N-UH 4GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F5-6400J3239G16G 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Transcend Information TS2GLH64V4B 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD64GX4M8B3200C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KF2666C16S4/16G 16GB
报告一个错误
×
Bug description
Source link