G Skill Intl F3-10600CL9-2GBNT 2GB vs A-DATA Technology DDR4 2800 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

A-DATA Technology DDR4 2800 8GB

需要考虑的原因
A-DATA Technology DDR4 2800 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 26

左右 -24% 更低的延时
更快的读取速度，GB/s

19.1 13.2

测试中的平均数值
更快的写入速度，GB/s

15.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

A-DATA Technology DDR4 2800 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 21
读取速度，GB/s

13.2 19.1
写入速度，GB/s

8.4 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-14900CL8-4GBXM 4GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Kingston 9905711-002.A00G 4GB

Kingston 9905711-002.A00G 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-2666C19-32GNT 32GB

G Skill Intl F4-2666C19-32GNT 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

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G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Apacer Technology 78.CAGPE.AUF0B 8GB

Apacer Technology 78.CAGPE.AUF0B 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB