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G Skill Intl F3-10600CL9-2GBNT 2GB
Dust Leopard DDR4-2400 C16 8GB 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Dust Leopard DDR4-2400 C16 8GB 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 53
    左右 51% 更低的延时
Dust Leopard DDR4-2400 C16 8GB 8GB 需要考虑的原因
Dust Leopard DDR4-2400 C16 8GB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.2 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Dust Leopard DDR4-2400 C16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 53
  • 读取速度，GB/s
    13.2 left arrow 20.2
  • 写入速度，GB/s
    8.4 left arrow 11.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2476

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-2666C18-8GFT 8GB
G Skill Intl F4-2666C18-8GFT 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Crucial Technology BL8G30C15U4B.8FE 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM