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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs G Skill Intl F4-2400C15-16GIS 16GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
G Skill Intl F4-2400C15-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2400C15-16GIS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2400C15-16GIS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    13.2 left arrow 16.7
  • 写入速度，GB/s
    8.4 left arrow 11.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3133

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

G Skill Intl F4-2400C15-16GIS 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD48GS88C-32N2200 8GB
Essencore Limited KD48GS88C-32N2200 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMT64GX4M8X3000C15 8GB
Corsair CMT64GX4M8X3000C15 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston MSI24D4S7D8MH-16 16GB
Kingston MSI24D4S7D8MH-16 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9905700-072.A01G 16GB
Kingston 9905700-072.A01G 16GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM