G Skill Intl F3-10600CL9-2GBNT 2GB vs G Skill Intl F4-3600C16-16GTZNC 16GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

G Skill Intl F4-3600C16-16GTZNC 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

G Skill Intl F4-3600C16-16GTZNC 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTZNC 16GB

报告一个错误

更快的读取速度，GB/s

19.4 13.2

测试中的平均数值
更快的写入速度，GB/s

16.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3600C16-16GTZNC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

13.2 19.4
写入速度，GB/s

8.4 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Corsair CMT32GX4M4C3200C16 8GB

Corsair CMT32GX4M4C3200C16 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Micron Technology 16KTF1G64HZ-1G6E1 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB