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G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
29
左右 10% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
报告一个错误
更快的读取速度,GB/s
17.2
13.2
测试中的平均数值
更快的写入速度,GB/s
15.7
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
29
读取速度,GB/s
13.2
17.2
写入速度,GB/s
8.4
15.7
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2070
3546
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL8G24C16U4B.8FB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9965662-016.A00G 16GB
Micron Technology AFSD416ES1P 16GB
Kingston 9965525-018.A00LF 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Samsung M378B1G73QH0-CK0 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CM4X16GF3200C22S2 16GB
Samsung M471B1G73QH0-YK0 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung M3 78T3354BZ0-CCC 256MB
EXCELERAM D4168G8HHSS9CJRB21 16GB
报告一个错误
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Bug description
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