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G Skill Intl F3-10600CL9-2GBNT 2GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 85
    左右 69% 更低的延时
  • 更快的读取速度，GB/s
    13.2 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 6.0
    测试中的平均数值
InnoDisk Corporation M4S0-4GSSNCIK 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 85
  • 读取速度，GB/s
    13.2 left arrow 11.3
  • 写入速度，GB/s
    8.4 left arrow 6.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 1118

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
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Kingston HX421C14FB/4 4GB
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G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
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Apacer Technology GD2.2229BH.001 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9965433-034.A00LF 4GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology CT8G4DFD824A.C16FDD2 8GB
内存RAM
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Kingston KF3200C16D4/16GX 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
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Kingston 99U5471-033.A00LF 4GB
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Kingston 992RE04G800UV-FCDT 4GB
内存RAM