G Skill Intl F3-10600CL9-2GBNT 2GB vs Micron Technology 18ASF1G72PDZ-2G6B1 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时
更快的读取速度，GB/s

13.2 11.2

测试中的平均数值
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6B1 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

13.2 11.2
写入速度，GB/s

8.4 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 2266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFRA266.C8FE 16GB

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Apacer Technology 75.A73AA.G03 2GB

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Crucial Technology CT8G4DFD8213.C16FA11 8GB

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Kingston 9965433-034.A00LF 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMK64GX4M8B2800C14 8GB

Corsair CMK64GX4M8B2800C14 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Samsung M386B4G70DM0-CMA4 32GB

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Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

Samsung M378B5673EH1-CF8 2GB

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Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB