RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 26
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 18
  • 读取速度，GB/s
    13.2 left arrow 20.4
  • 写入速度，GB/s
    8.4 left arrow 18.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3529

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK128GX4M8Z2933C16 16GB
Corsair CMK128GX4M8Z2933C16 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM