G Skill Intl F3-12800CL7-4GBXM 4GB vs G Skill Intl F4-3400C16-16GVR 16GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

G Skill Intl F4-3400C16-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3400C16-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

17.4 14.8

测试中的平均数值
更快的写入速度，GB/s

13.5 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3400C16-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

14.8 17.4
写入速度，GB/s

8.7 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2481 3195

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F4-2133C15-8GIS 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Apacer Technology 76.D305G.D060B 16GB

Apacer Technology 76.D305G.D060B 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston KHX3200C20S4/8G 8GB

Kingston KHX3200C20S4/8G 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB