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G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F3-1333C9-4GIS 4GB vs G Skill Intl F4-2933C16-8GTZRX 8GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 72
    左右 61% 更低的延时
G Skill Intl F4-2933C16-8GTZRX 8GB 需要考虑的原因
G Skill Intl F4-2933C16-8GTZRX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 72
  • 读取速度，GB/s
    12.4 left arrow 15.8
  • 写入速度，GB/s
    7.5 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 1951

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston KHX2666C16/16G 16GB
Kingston KHX2666C16/16G 16GB
内存RAM