G Skill Intl F3-14900CL8-4GBXM 4GB vs A-DATA Technology AO2P24HC8T1-BTBS 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 35

左右 11% 更低的延时
更快的读取速度，GB/s

17.4 13.7

测试中的平均数值
更快的写入速度，GB/s

10.9 7.9

测试中的平均数值

A-DATA Technology AO2P24HC8T1-BTBS 8GB

需要考虑的原因
A-DATA Technology AO2P24HC8T1-BTBS 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 35
读取速度，GB/s

17.4 13.7
写入速度，GB/s

10.9 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Crucial Technology CT8G4SFS8213.M8FA 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Smart Modular SF464128CKHI6DFSEG 4GB

Smart Modular SF464128CKHI6DFSEG 4GB

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Kingston ACR512X64D3S13C9G 4GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-4133C19-8GTZR 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB