G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology BLS16G4D240FSB.16FAD 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

Crucial Technology BLS16G4D240FSB.16FAD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FAD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 -3% 更低的延时
更快的写入速度，GB/s

12.9 10.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 30
读取速度，GB/s

17.4 17.4
写入速度，GB/s

10.9 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 3310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Crucial Technology BLS8G4D240FSC.16FARG 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Kingston 9905403-444.A00LF 4GB

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Jinyu CL16-16-16 D4-2400 8GB

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Kingston 99U5584-005.A00LF 4GB

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Kingston KYXC0V-MIH 16GB

Kingston LV32D4S2S8HD-8 8GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-3200C16-4GVK 4GB