G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-3300C16-16GTZKW 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 16.1

测试中的平均数值

G Skill Intl F4-3300C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 31

左右 -29% 更低的延时
更快的写入速度，GB/s

11.9 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3300C16-16GTZKW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 24
读取速度，GB/s

17.4 16.1
写入速度，GB/s

10.9 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3305

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N

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Kingston ACR512X64D3S13C9G 4GB

Kingston 9905700-026.A00G 8GB

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Kllisre KRE-D3U1333M/8G 8GB

Kllisre KRE-D3U1333M/8G 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Crucial Technology CT8G4SFS824A.C8FBD1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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Corsair CM4X8GF2133C15S2 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology D12.2324WT.001 8GB

Apacer Technology D12.2324WT.001 8GB