G Skill Intl F3-14900CL8-4GBXM 4GB vs Kingston 9965657-011.A00G 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Kingston 9965657-011.A00G 16GB

Kingston 9965657-011.A00G 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 6% 更低的延时
更快的读取速度，GB/s

17.4 11.6

测试中的平均数值
更快的写入速度，GB/s

10.9 9.2

测试中的平均数值

Kingston 9965657-011.A00G 16GB

需要考虑的原因
Kingston 9965657-011.A00G 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston 9965657-011.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 33
读取速度，GB/s

17.4 11.6
写入速度，GB/s

10.9 9.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2102

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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A-DATA Technology DQVE1908 512MB

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Kingston 99U5471-056.A00LF 8GB

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Samsung M471A1K43DB1-CTD 8GB

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Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

INTENSO 5641162 8GB

INTENSO 5641162 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB