G Skill Intl F3-14900CL8-4GBXM 4GB vs Samsung M471A1K1KBB1-CRC 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 12.6

测试中的平均数值
更快的写入速度，GB/s

10.9 6.2

测试中的平均数值

Samsung M471A1K1KBB1-CRC 8GB

需要考虑的原因
Samsung M471A1K1KBB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 -19% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M471A1K1KBB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 26
读取速度，GB/s

17.4 12.6
写入速度，GB/s

10.9 6.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 1970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.C1GS7.AUC0B 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Kingston KM0VW4-MID 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMU32GX4M2C3333C16 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB