G Skill Intl F3-14900CL8-4GBXM 4GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 64

左右 52% 更低的延时
更快的读取速度，GB/s

17.4 16.8

测试中的平均数值
更快的写入速度，GB/s

10.9 8.3

测试中的平均数值

Samsung V-GeN D4S8GL32A8TL 8GB

需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 64
读取速度，GB/s

17.4 16.8
写入速度，GB/s

10.9 8.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GR7MFR4N-TFTD 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung V-GeN D4S8GL32A8TL 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Samsung M378A2K43CB1-CRC 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingmax Semiconductor GLLH22F-18---------- 16GB

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Kllisre 99P5428-002.A00LF 8GB

Kllisre 99P5428-002.A00LF 8GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB