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G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 56
    左右 45% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 10.5
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 17.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 56
  • 读取速度，GB/s
    17.4 left arrow 20.1
  • 写入速度，GB/s
    10.9 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 2455

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Corsair CMD8GX3M2A2133C9 4GB
Corsair CMD8GX3M2A2133C9 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-3200C15-4GRKD 4GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3600C18-8GTRG 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
内存RAM