G Skill Intl F3-14900CL8-4GBXM 4GB vs SK Hynix HMA82GS6AFR8N-UH 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 16% 更低的延时
更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

10.9 9.6

测试中的平均数值

SK Hynix HMA82GS6AFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS6AFR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA82GS6AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 37
读取速度，GB/s

17.4 13.9
写入速度，GB/s

10.9 9.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 2461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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V-Color Technology Inc. TD416G26D819-VC 16GB

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Samsung M471B5173EB0-YK0 4GB

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Samsung M471A5244CB0-CWE 4GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Kingston KHX1866C9D3/8GX 8GB

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Smart Modular SF4642G8CK8IEHLSBG 16GB

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Corsair CMD16GX4M4B2400C10 4GB

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Teclast TLD416G26A30 16GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Corsair CMV8GX4M1A2666C18 8GB

Corsair CMV8GX4M1A2666C18 8GB