G Skill Intl F3-14900CL9-4GBSR 4GB vs Corsair CMW128GX4M8C3200C16 16GB

总分

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

总分

Corsair CMW128GX4M8C3200C16 16GB

Corsair CMW128GX4M8C3200C16 16GB

差异规格评论

差异

G Skill Intl F3-14900CL9-4GBSR 4GB

需要考虑的原因
G Skill Intl F3-14900CL9-4GBSR 4GB

报告一个错误

更快的读取速度，GB/s

16.4 14.6

测试中的平均数值

Corsair CMW128GX4M8C3200C16 16GB

需要考虑的原因
Corsair CMW128GX4M8C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 36

左右 -13% 更低的延时
更快的写入速度，GB/s

12.9 10.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL9-4GBSR 4GB

Corsair CMW128GX4M8C3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 32
读取速度，GB/s

16.4 14.6
写入速度，GB/s

10.5 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2618 2959

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology CT16G4DFD8213.M16FA 16GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BL8G30C15U4W.8FE 8GB

Crucial Technology BL8G30C15U4W.8FE 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

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Kingston 9905403-515.A00LF 8GB

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G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C19-16GSXWB 16GB

G Skill Intl F4-3600C19-16GSXWB 16GB